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Proceedings Paper

On the degree to which the increase in the concentration of the recombination centers raises the efficiency of interband photoexcitation of carriers under weak optical radiation
Author(s): Vyacheslav A. Kholodnov; Albina A. Drugova
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Paper Abstract

The results of consistent (beyond the commonly used approximation of quasi-neutrality) theoretical analysis of the efficiency of inter-band photoexcitation of carriers in the case of absorption of weak optical radiation and non-equilibrium carrier recombination via deep impurity are presented. The model of a single recombination deep acceptor level and shallow donor impurity is considered. It is shown that the carrier photoexcitation efficiency can be drasticly increased at the cost of increase in the concentration of recombination centers. Also it is shown that the solution beyond approximation of quasi-neutrality may be basically differed from the quasi-neutral solutions.

Paper Details

Date Published: 30 September 2003
PDF: 14 pages
Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517361
Show Author Affiliations
Vyacheslav A. Kholodnov, Research, Development, and Production Ctr. ORION (Russia)
Albina A. Drugova, Research, Development, and Production Ctr. ORION (Russia)


Published in SPIE Proceedings Vol. 5126:
17th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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