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Proceedings Paper

Photosensitivity of heterostructure S1-xGex/Si taking into account free-carrier absorption of radiation and length of hot carrier energy path
Author(s): Pavel S. Serebrennikov
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Paper Abstract

With allowance for a diffusion motion of hot carriers after absorption IR radiation by the method of Green function a calculation of quantum efficiency and photosensitivity is carried out. The dependence of quantum efficiency and photosensitivity on thickness of the Si1-xGex layer, free-carrier absorption coefficient of IR radiation and inelastic mean free path of hot carriers is obtained both for forward and backside (through a substrate) illumination.

Paper Details

Date Published: 30 September 2003
PDF: 3 pages
Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517360
Show Author Affiliations
Pavel S. Serebrennikov, Research, Development, and Production Ctr. ORION (Russia)


Published in SPIE Proceedings Vol. 5126:
17th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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