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Proceedings Paper

Effect of photo-induced space charge on dependence of intrinsic threshold photoresistor amplification on two-level recombination impurity concentration
Author(s): Vyacheslav A. Kholodnov; Pavel S. Serebrennikov
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Paper Abstract

Beyond the range of standard quasi-neutrality approximation dependence of photoelectric gain coefficient G on two-level recombination centers concentration N and applied electric field strength E0 is studied. Model: inter-band homogeneous absorption of weak radiation, acceptor type of recombination centers, extracting current contacts. The physical interpretation of the results obtained is given.

Paper Details

Date Published: 30 September 2003
PDF: 5 pages
Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517358
Show Author Affiliations
Vyacheslav A. Kholodnov, Research, Development, and Production Ctr. ORION (Russia)
Pavel S. Serebrennikov, Research, Development, and Production Ctr. ORION (Russia)


Published in SPIE Proceedings Vol. 5126:
17th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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