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Proceedings Paper

Photocapacitance effect in narrow bandgap PbSnTe (In)
Author(s): Alexander E. Klimov; Vladimir N. Shumsky
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Paper Abstract

Low frequency permittivity of PbSnTe(In) solid solution was investigated in darkness and under illumination. ε=2,000-300,000 was found depending on temperature and illumination. For the first time the increase of ε under illumination by about two orders was observed at LH temperature. Far IR cut off of the effect was estimated. It was found that the best correlation of calculations with experimental data took place if we supposed the presence of narrow band of PbSnTe In sensitivity within 300-400 μm spectral region.

Paper Details

Date Published: 30 September 2003
PDF: 6 pages
Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517355
Show Author Affiliations
Alexander E. Klimov, Institute of Semiconductor Physics (Russia)
Vladimir N. Shumsky, Institute of Semiconductor Physics (Russia)


Published in SPIE Proceedings Vol. 5126:
17th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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