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Proceedings Paper

Isolating surface and bulk contributions in an HgCdTe junction diode
Author(s): Vishnu Gopal; Sudha Gupta; R. K. Bhan; R. Pal; P. K. Chaudhary; V. Kumar
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Paper Abstract

This paper reports the possibility of assessing the relative surface and bulk contributions in HgCdTe junction diodes by analyzing the Current - voltage (I - V) and dynamic impedance - voltage (Rd - V) characteristics of an individual diode. As an example, an analysis of the experimental data obtained on diodes fabricated in our laboratory on bulk grown p-type HgCdTe wafers using B+ implantation and ZnS passivating layers will be presented.

Paper Details

Date Published: 30 September 2003
PDF: 8 pages
Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517323
Show Author Affiliations
Vishnu Gopal, Solid State Physics Lab. (India)
Sudha Gupta, Solid State Physics Lab. (India)
R. K. Bhan, Solid State Physics Lab. (India)
R. Pal, Solid State Physics Lab. (India)
P. K. Chaudhary, Solid State Physics Lab. (India)
V. Kumar, Solid State Physics Lab. (India)


Published in SPIE Proceedings Vol. 5126:
17th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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