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Proceedings Paper

The properties of Schottky-barrier photodiodes based on CdxHg1-xTe with tunnel transparent dielectric
Author(s): V. Damnjanovic; V. P. Ponomarenko
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Paper Abstract

The results are presented on the basis of characteristics of p-type CdHgTe (CMT) diodes with metal-tunnel transparent dielectric - semiconductor (MTTD photodiodes) in the 8-11 μm spectral range.

Paper Details

Date Published: 30 September 2003
PDF: 6 pages
Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517319
Show Author Affiliations
V. Damnjanovic, Univ. of Belgrade (Serbia-Montenegro)
V. P. Ponomarenko, Research, Development, and Production Ctr. ORION (Russia)


Published in SPIE Proceedings Vol. 5126:
17th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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