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Properties of Schottky-barrier p-CdxHg1-xTe structures with metal-tunnel transparent dielectric
Author(s): V. Damnjanovic; V. P. Ponomarenko
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Paper Abstract

Potential barriers in Schottky diodes with a metal-tunnel transparent dielectric based on CdxHg1-xTe (CMT) with x~0.2 have been studied. We used In, Tn, Al and Cr as metal barriers. Superthin dielectric, Al2O3 and fluorine plasma films were deposited between the CMT surface and a metal.

Paper Details

Date Published: 30 September 2003
PDF: 9 pages
Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517318
Show Author Affiliations
V. Damnjanovic, Univ. of Belgrade (Serbia-Montenegro)
V. P. Ponomarenko, Research, Development, and Production Ctr. ORION (Russia)

Published in SPIE Proceedings Vol. 5126:
17th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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