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Proceedings Paper

Photoconductivity gain by Si p-n junction containing quantum dots
Author(s): A. V. Dvurechenskii; Ivan A. Ryazantsev; Anatolii P. Kovchavsev; Georgii L. Kuryshev; Alexander I. Nikivorov; Oleg P. Pchelyakov
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Paper Abstract

Si(Ge) junction (of p-i-n diode type) containing Ge of self-assembled quantum dots (SAQD). in a ~0,6 μm-thick near-surface layer were investigated. Analysis of photo- and electrophysical performances allowed to revel ~ 10-103 Iph(V) photocurrent gain by p-n junction at T=78K upon photodiode radiation with the photon energy corresponding to Si and Ge basic interband transitions. A model is proposed which assumes that SAQDs with a positive charge at T=78K turn out to be trapping centers for electrons/ At “forward” voltages on a photodiode (V>0,2), when the p-layer SAQDs are already partially outside the p-n junction, there takes place electron capture on SAQDs as on adhesion centers under conditions of photocarrier optical generation in Si(Ge). In this case, excess concentration of the p-layer electrons forming exsiton-type bound states with quantum dots leads to lowering the p-n junction potential barrier and photocurrent amplification.

Paper Details

Date Published: 30 September 2003
PDF: 11 pages
Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517308
Show Author Affiliations
A. V. Dvurechenskii, Institute of Semiconductor Physics SB RAS (Russia)
Ivan A. Ryazantsev, Institute of Semiconductor Physics SB RAS (Russia)
Anatolii P. Kovchavsev, Institute of Semiconductor Physics SB RAS (Russia)
Georgii L. Kuryshev, Institute of Semiconductor Physics SB RAS (Russia)
Alexander I. Nikivorov, Institute of Semiconductor Physics SB RAS (Russia)
Oleg P. Pchelyakov, Institute of Semiconductor Physics SB RAS (Russia)


Published in SPIE Proceedings Vol. 5126:
17th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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