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Proceedings Paper

Responsivity of multiple quantum well structures grown by MOCVD at normal incidence
Author(s): Vladimir B. Kulikov; G. H. Avetisyan; L. M. Vasilevskaya; I. D. Zalevsky; I. V. Budkin; A. A. Padalitsa
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Paper Abstract

The success in the area of multiple quantum well (MQW) devices development have been achieved mainly due to employment of molecular beam epitaxy (MBE). However at the same time for MQW growing metalorganic chemical vapor deposition (MOCVD) is used, because of its more high productivity. Our experience in MOCVD grown MQW and photodetectors based on them shows, that they have some differences from MBE grown analogs. These differences are: more high asymmetry of current-voltage characteristics, considerable responsivity at normal incidence. We believe, that differences mentioned above are related with features of MOCVD. In this report we present experimental results of responsivity investigation of MOCVD grown MQW, relation between experimental results and MOCVD grown MQW features is discussed.

Paper Details

Date Published: 30 September 2003
PDF: 7 pages
Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517307
Show Author Affiliations
Vladimir B. Kulikov, State Unitary Enterprise Science and Production Enterprise Pulsar (Russia)
G. H. Avetisyan, State Unitary Enterprise Science and Production Enterprise Pulsar (Russia)
L. M. Vasilevskaya, State Unitary Enterprise Science and Production Enterprise Pulsar (Russia)
I. D. Zalevsky, Sigm Plus Co. (Russia)
I. V. Budkin, Sigm Plus Co. (Russia)
A. A. Padalitsa, Sigm Plus Co. (Russia)


Published in SPIE Proceedings Vol. 5126:
17th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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