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Proceedings Paper

The 4x288 linear FPA on the heteroepitaxial Hg1-xCdxTe base
Author(s): Yu. P. Derkach; C A. Dvoretski; A. G. Golenkov; A. G. Klimenko; A. I. Kozlov; I. V. Marchishin; V. N. Ovsyuk; V. P. Reva; Yu. G. Sidorov; F. F. Sizov; A. O. Suslyakov; N. Ch. Talipov; V. V. Vasilyev; T. I. Zahar'yash; V. V. Zabudsky
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Paper Abstract

x4×288 heteroepitaxial mercury-cadmium telluride (MCT) linear arrays for long wavelength infrared (LWIR) applications with 28×25 micron diodes and charge coupled devices (CCD) silicon readouts were designed, manufactured and tested. MCT heteroepitaxial layers were grown by MBE technology on (013) GaAs substrates with CdZnTe buffer layers and have cutoff wavelength λco ≈ 11.8 μm at T = 78 K. To decrease the surface influence of the carriers recombination processes the layers with composition changes and its increase both toward the surface and HgCdTe/CdZnTe boundary were grown. Silicon read-outs with CCD multiplexers with input direct injection circuits were designed, manufactured and tested. The testing procedure to qualify read-out integrated circuits (ROICs) on wafer level at T = 300 K was worked out. The silicon read-outs for 4×288 arrays, with skimming and partitioning functions included were manufactured by n-channel MOS technology with buried or surface channel CCD register. Designed CCD readouts are driven with four- or two-phase clock pulses. The HgCdTe arrays and Si CCD readouts were hybridized by cold welding indium bumps technology. With skimming mode used for 4×288 MCT n-p-junctions, the detectivity was about (formula available in paper) for background temperature Tb = 295 K.

Paper Details

Date Published: 30 September 2003
PDF: 7 pages
Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517243
Show Author Affiliations
Yu. P. Derkach, Institute of Semiconductor Physics NASU (Ukraine)
C A. Dvoretski, Institute of Semiconductor Physics SB RAS (Russia)
A. G. Golenkov, Institute of Semiconductor Physics NASU (Ukraine)
A. G. Klimenko, Institute of Semiconductor Physics SB RAS (Russia)
A. I. Kozlov, Institute of Semiconductor Physics SB RAS (Russia)
I. V. Marchishin, Institute of Semiconductor Physics SB RAS (Russia)
V. N. Ovsyuk, Institute of Semiconductor Physics SB RAS (Russia)
V. P. Reva, Institute of Semiconductor Physics NASU (Ukraine)
Yu. G. Sidorov, Institute of Semiconductor Physics SB RAS (Russia)
F. F. Sizov, Institute of Semiconductor Physics NASU (Ukraine)
A. O. Suslyakov, Institute of Semiconductor Physics SB RAS (Russia)
N. Ch. Talipov, Institute of Semiconductor Physics SB RAS (Russia)
V. V. Vasilyev, Institute of Semiconductor Physics SB RAS (Russia)
T. I. Zahar'yash, Institute of Semiconductor Physics SB RAS (Russia)
V. V. Zabudsky, Institute of Semiconductor Physics NASU (Ukraine)


Published in SPIE Proceedings Vol. 5126:
17th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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