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Proceedings Paper

The 128x128 and 288x384 InSb array photodetective assemblies for 3- to 5-um spectral range
Author(s): Vladimir M. Akimov; V. F. Chishko; Alexander I. Dirochka; I. L. Kasatkin; Ye. A. Klimanov; N. V. Kravtchenko; A. A. Lopukhin; V. F. Pasekov
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Paper Abstract

This paper explains the technologies used for high-performance Infrared Focal Plane Arrays (IRFPAs) based on InSb - p-MOS hybrid multiplexers. Mid-Wavelength Infrared (MWIR) photodiode arrays are fabricated using thin-base technology. Each photodiode array consists of 288x384-element p+-on-n diodes formed by Be+-implantation. The diodes had a typical zero-bias resistance of 0.5 GΩ. p-MOS Rolling Read Out Integrated Circuits (ROIC) with two outputs were used. Integrated Dewar Assembly type Integrated Stirling was used for cooling FPA. The Infrared Focal Plane Arrays had a typical Noise Equivalent Power (6÷8)10-13 W/pixel at 2•10-3 s storage time.

Paper Details

Date Published: 30 September 2003
PDF: 7 pages
Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517242
Show Author Affiliations
Vladimir M. Akimov, Research, Development, and Production Ctr. ORION (Russia)
V. F. Chishko, Research, Development, and Production Ctr. ORION (Russia)
Alexander I. Dirochka, Research, Development, and Production Ctr. ORION (Russia)
I. L. Kasatkin, Research, Development, and Production Ctr. ORION (Russia)
Ye. A. Klimanov, Research, Development, and Production Ctr. ORION (Russia)
N. V. Kravtchenko, Research, Development, and Production Ctr. ORION (Russia)
A. A. Lopukhin, Research, Development, and Production Ctr. ORION (Russia)
V. F. Pasekov, Research, Development, and Production Ctr. ORION (Russia)


Published in SPIE Proceedings Vol. 5126:
17th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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