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Proceedings Paper

The 128x128 MWIR FPA on the base of epitaxial layer MCT grown by MOCVD
Author(s): K. O. Boltar; N. I. Iakovleva; S. V. Golovin; V. P. Ponomarenko; V. I. Stafeev; I. D. Bourlakov; A. N. Moiseev; A. P. Kotkov; V. V. Dorofeev
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Paper Abstract

MWIR 128x128 Focal Plane Array (FPA) performance has been investigated. FPA has been fabricated on the base of HgCdTe active layers grown on (111)B GaAs substrate by Metal Organic Chemical Vapor Deposition (MOCVD). Histograms and diagrams of photodiodes current, responsivity and detectivity have been plotted for FPA with cutoff value 5,1μm at T=200K.

Paper Details

Date Published: 30 September 2003
PDF: 5 pages
Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517241
Show Author Affiliations
K. O. Boltar, Research, Development, and Production Ctr. ORION (Russia)
N. I. Iakovleva, Research, Development, and Production Ctr. ORION (Russia)
S. V. Golovin, Research, Development, and Production Ctr. ORION (Russia)
V. P. Ponomarenko, Research, Development, and Production Ctr. ORION (Russia)
V. I. Stafeev, Research, Development, and Production Ctr. ORION (Russia)
I. D. Bourlakov, Research, Development, and Production Ctr. ORION (Russia)
A. N. Moiseev, Chemistry Institute of Rare Materials RAS (Russia)
A. P. Kotkov, Chemistry Institute of Rare Materials RAS (Russia)
V. V. Dorofeev, Chemistry Institute of Rare Materials RAS (Russia)


Published in SPIE Proceedings Vol. 5126:
17th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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