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Proceedings Paper

ZnO homoepitaxy
Author(s): Jeff Nause; Shanthi Ganesan; Bill Nemeth
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Paper Abstract

This paper investigates the properties of homoepitaxial growth of ZnO. High quality bulk ZnO crystals have been produced by melt growth techniques in addition to ZnO thin films grown by Metalorganic Chemical Vapor Deposition (MOCVD) on bulk ZnO substrates (Zinc side and Oxygen side). The photoluminescence showed the dominance of strong and narrow band due to the band edge emissions for undoped ZnO. UV transmission showed sharp transition indication good crystal quality. High resolution x-ray diffraction measurements (HRXRD) along with rocking curve showed excellent crystal quality with full width at half maximum values close to 100 arc seconds.

Paper Details

Date Published: 6 July 2004
PDF: 8 pages
Proc. SPIE 5359, Quantum Sensing and Nanophotonic Devices, (6 July 2004); doi: 10.1117/12.517230
Show Author Affiliations
Jeff Nause, Cermet, Inc. (United States)
Shanthi Ganesan, Cermet, Inc. (United States)
Bill Nemeth, Cermet, Inc. (United States)


Published in SPIE Proceedings Vol. 5359:
Quantum Sensing and Nanophotonic Devices
Manijeh Razeghi; Gail J. Brown, Editor(s)

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