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Proceedings Paper

HgCdTe photodiodes current-voltage characteristics simulation
Author(s): K. O. Boltar; N. I. Iakovleva
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Paper Abstract

Different current mechanisms in HdCdTe p-n junctions have been analyzed. Current-voltage characteristics of photodiodes in HdCdTe epitaxial layers formed by different epitaxial methods are measured and simulated. The numerical simulation of photodiodes current-voltage characteristics allows to evaluate HdCdTe material parameters and improve Focal Plane Arrays technology.

Paper Details

Date Published: 30 September 2003
PDF: 9 pages
Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517187
Show Author Affiliations
K. O. Boltar, Research, Development, and Production Ctr. ORION (Russia)
N. I. Iakovleva, Research, Development, and Production Ctr. ORION (Russia)


Published in SPIE Proceedings Vol. 5126:
17th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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