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Proceedings Paper

The analysis of ion-selective field-effect transistor operation in chemical sensors
Author(s): Zenon Hotra; Roman Holyaka; Michael Hladun; Iryna Humenuk
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Paper Abstract

In this paper we present the research results of influence of substrate potential in ion-selective field-effect transistors (ISFET) on output signal of chemical sensors, e.g. PH-meters. It is shown that the instability of substrate-source p-n junction bias in well-known chemical sensors, which use grounded reference electrode - ISFET gate, affect on sensor characteristics in negative way. The analytical description and research results of 'substrate effect' on ISFET characteristics are considered.

Paper Details

Date Published: 22 September 2003
PDF: 4 pages
Proc. SPIE 5124, Optoelectronic and Electronic Sensors V, (22 September 2003); doi: 10.1117/12.517063
Show Author Affiliations
Zenon Hotra, Lviv Polytechnic National Univ. (Ukraine)
Rzeszow Univ. of Technology (Poland)
Roman Holyaka, Lviv Polytechnic National Univ. (Ukraine)
Michael Hladun, Lviv Polytechnic National Univ. (Ukraine)
Iryna Humenuk, Lviv Polytechnic National Univ. (Ukraine)

Published in SPIE Proceedings Vol. 5124:
Optoelectronic and Electronic Sensors V
Wlodzimierz Kalita, Editor(s)

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