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Proceedings Paper

New ion-sensitive field effect transistors (ISFETs) with backside contacts for flow analysis
Author(s): Wojciech Wroblewski; Artur Dybko; Michal Chudy; Zbigniew Brzozka
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Paper Abstract

Novel back-side contacts structures of ISFETs (ion-selective field effect transistors) are described in this paper. Back-side contact type transducers are especially suitable for the design of chemical sensors for multiparameter flow analysis. The sensor structure requires a specialized flow-head, allowing the measurement of the signals of 10 ISFETs. Unmodified transducers with Si3N4 gate are H+-sensitive and can be used as solid-state pH sensors. Moreover, if the ISFET is covered with an ion-selective membrane it is possible to construct a sensor for the determination of a chosen ion. Measurement properties of the designed transducers and nitrate-sensitive CHEMFET’s were determined in the flow-cell set-up. Constructed microsensors can be applied in water quality monitoring, providing in-situ water analysis without sample preparation.

Paper Details

Date Published: 22 September 2003
PDF: 5 pages
Proc. SPIE 5124, Optoelectronic and Electronic Sensors V, (22 September 2003); doi: 10.1117/12.517058
Show Author Affiliations
Wojciech Wroblewski, Warsaw Univ. of Technology (Poland)
Artur Dybko, Warsaw Univ. of Technology (Poland)
Michal Chudy, Warsaw Univ. of Technology (Poland)
Zbigniew Brzozka, Warsaw Univ. of Technology (Poland)

Published in SPIE Proceedings Vol. 5124:
Optoelectronic and Electronic Sensors V
Wlodzimierz Kalita, Editor(s)

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