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Proceedings Paper

Influence of free carrier heating on IR light detection in narrow-gap semiconductors
Author(s): Steponas P. Asmontas; J. Gradauskas; D. Seliuta; A. Suziedelis; E. Sirmulis; V. V. Tetyorkin; A. Urbelis; G. Valusis
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Paper Abstract

Our study is concerned with peculiarities of intense CO2 laser light detection in narrow-gap semiconductor p-n junctions. Samples of InSb, PbTe and HgCdTe were udner investigation. We present experimental evidence of free carrier heating phenomenon in the semiconductors and its influence on photovoltaic signal. We show, that in particular cases, depending on laser light intensity and applied bias, the hot carrier photosignal of opposite polarity may predominate over the ordinary photovoltaic one.

Paper Details

Date Published: 8 August 2003
PDF: 5 pages
Proc. SPIE 5123, Advanced Optical Devices, Technologies, and Medical Applications, (8 August 2003); doi: 10.1117/12.517029
Show Author Affiliations
Steponas P. Asmontas, Semiconductor Physics Institute (Lithuania)
J. Gradauskas, Semiconductor Physics Institute (Lithuania)
Vilnius Gediminas Technical Univ. (Lithuania)
D. Seliuta, Semiconductor Physics Institute (Lithuania)
A. Suziedelis, Semiconductor Physics Institute (Lithuania)
Vilnius Gediminas Technical Univ. (Lithuania)
E. Sirmulis, Institute of Physics (Lithuania)
V. V. Tetyorkin, Institute of Semiconductor Physics (Ukraine)
A. Urbelis, Vilnius Gediminas Technical Univ. (Lithuania)
G. Valusis, Semiconductor Physics Institute (Lithuania)
Vilnius Gediminas Technical Univ. (Lithuania)


Published in SPIE Proceedings Vol. 5123:
Advanced Optical Devices, Technologies, and Medical Applications
Janis Spigulis; Janis Teteris; Maris Ozolinsh; Andrejs Lusis, Editor(s)

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