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Proceedings Paper

Progress in GaN-based materials and optical devices
Author(s): Ivars Melngailis
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Paper Abstract

Recent advances in the epitaxial growth of GaN and its alloys with Al and In have led to major improvements in the performance of short-wavelength visible and UV diode lasers and solar-blind detectors for UV wavelengths. A decrease in defect densities to less than 106 cm-2 by an epitaxial lateral overgrowth technique has enabled the fabrication of 405-nm InGaN lasers emitting 30 mW continuously with 15000-h lifetimes. Laser wavelength coverage has been extended to 366 nm in the UV. Initial results in the development of quantum dot lasers have been reported and active mode locking of 409-nm lasers has yielded 30-ps-long pulses, of interest for frequency upconversion. AlGaN photodiodes with a band-edge wavelength of 285 nm, appropriate for solar-blind detection, have been fabricated and low dark-current densites (10 nA/cm2 at -5-V bias) have ben reported. Gains of 10 when operated in the linear mode and gains of ~106 in Geiger-mode operation have been obtained in GaN avalanche photodiodes.

Paper Details

Date Published: 8 August 2003
PDF: 7 pages
Proc. SPIE 5123, Advanced Optical Devices, Technologies, and Medical Applications, (8 August 2003); doi: 10.1117/12.517027
Show Author Affiliations
Ivars Melngailis, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 5123:
Advanced Optical Devices, Technologies, and Medical Applications
Janis Spigulis; Janis Teteris; Maris Ozolinsh; Andrejs Lusis, Editor(s)

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