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Proceedings Paper

Fast infrared detectors based on nonuniform semiconductors
Author(s): Steponas P. Asmontas; J. Gradauskas; D. Seliuta; A. Suziedelis; G. Valusis; E. Sirmulis
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Paper Abstract

We review novel group of fast infrared detectors based on hot carrier effects in nonuniform Ge, Si, GaAs, AlGaAs and Ti/n-Si Schottky structures. It is demonstrated that the devices can be used to detect infrared pulses of nanosecond duration at room temperature. Physcial mechanism responsible for the photovoltage signal formation both in p-n and l-h junction of moderately and degenerately doepd semiconductors are analyzed and discussed. The influence of aluminum arsenide mole fractin on th emagnitude of the photoresponse to infrared radiation in AlGaAs/GaAs p-n junction is studied. Operational principle of the Schottky barrier detector at various radaition frequencies is considered. It is shown that photoresponse of the Schottky barrier detector superlinearly depends on infrared radiation intensity.

Paper Details

Date Published: 8 August 2003
PDF: 10 pages
Proc. SPIE 5123, Advanced Optical Devices, Technologies, and Medical Applications, (8 August 2003); doi: 10.1117/12.517026
Show Author Affiliations
Steponas P. Asmontas, Semiconductor Physics Institute (Lithuania)
J. Gradauskas, Semiconductor Physics Institute (Lithuania)
D. Seliuta, Semiconductor Physics Institute (Lithuania)
A. Suziedelis, Semiconductor Physics Institute (Lithuania)
G. Valusis, Semiconductor Physics Institute (Lithuania)
E. Sirmulis, Semiconductor Physics Institute (Lithuania)


Published in SPIE Proceedings Vol. 5123:
Advanced Optical Devices, Technologies, and Medical Applications

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