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Proceedings Paper

New optoelectronic methodology for nondestructive evaluation of MEMS at the wafer level
Author(s): Cosme Furlong; Curtis F. Ferguson; Michael J. Melson
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Paper Abstract

One of the approaches to fabrication of MEMS involves surface micromachining to define dies on single crystal silicon wafers, dicing of the wafers to separate the dies, and electronic packaging of the individual dies. Dicing and packaging of MEMS accounts for a large fraction of the fabrication costs, therefore, nondestructive evaluation at the wafer level, before dicing, can have significant implications on improving production yield and costs. In this paper, advances in development of optoelectronic holography (OEH) techniques for nondestructive, noninvasive, full-field of view evaluation of MEMS at the wafer level are described. With OEH techniques, quantitative measurements of shape and deformation of MEMS, as related to their performance and integrity, are obtained with sub-micrometer spatial resolution and nanometer measuring accuracy. To inspect an entire wafer with OEH methodologies, measurements of overlapping regions of interest (ROI) on a wafer are recorded and adjacent ROIs are stitched together through efficient 3D correlation analysis algorithms. Capabilities of the OEH techniques are illustrated with representative applications, including determination of optimal inspection conditions to minimize inspection time while achieving sufficient levels of accuracy and resolution.

Paper Details

Date Published: 26 February 2004
PDF: 10 pages
Proc. SPIE 5265, Two- and Three-Dimensional Vision Systems for Inspection, Control, and Metrology, (26 February 2004); doi: 10.1117/12.515925
Show Author Affiliations
Cosme Furlong, Worcester Polytechnic Institute (United States)
Curtis F. Ferguson, Worcester Polytechnic Institute (United States)
Michael J. Melson, Worcester Polytechnic Institute (United States)


Published in SPIE Proceedings Vol. 5265:
Two- and Three-Dimensional Vision Systems for Inspection, Control, and Metrology
Bruce G. Batchelor; Heinz Hugli, Editor(s)

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