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Proceedings Paper

Optical and electrical properties of the CdS quantum wells of CdS/ZnSe heterostructures
Author(s): M. Dremel; H. Priller; M. Gruen; C. Klingshirn; Vaidotas Kazukauskas
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Paper Abstract

Earlier we reported the investigation of the electrical properties of selectively doped and degenerate CdS/ZnSe quantum heterostructures grown by molecular beam epitaxy. The maximum Hall mobilities in these heterostructures were nevertheless still inferior to 400 cm2/Vs. The purpose of the present work was to optimize these quantum structures in order to increase the carrier mobility and to analyze in detail the scattering mechanisms. We demonstrate that the Hall mobility in the CdS quantum well (QW) can reach 2800 cm2/Vs for slightly doped structures at low temperatures and that it is mostly limited by interface alloying scattering.

Paper Details

Date Published: 8 August 2003
PDF: 8 pages
Proc. SPIE 5122, Advanced Organic and Inorganic Optical Materials, (8 August 2003); doi: 10.1117/12.515801
Show Author Affiliations
M. Dremel, Univ. of Karlsruhe (Germany)
H. Priller, Univ. of Karlsruhe (Germany)
M. Gruen, Univ. of Karlsruhe (Germany)
C. Klingshirn, Univ. of Karlsruhe (Germany)
Vaidotas Kazukauskas, Vilnius Univ. (Lithuania)

Published in SPIE Proceedings Vol. 5122:
Advanced Organic and Inorganic Optical Materials
Andris Krumins; Donats Millers; Inta Muzikante; Andris Sternbergs; Vismants Zauls, Editor(s)

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