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Proceedings Paper

Quenching of transient photoluminescence by strong in-plane electric fields in quantum wells
Author(s): Jurgis Kundrotas; Adolfas Dargys; Steponas Asmontas; Gintaras Valusis; Klaus Koehler
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Paper Abstract

Investigations of transient photoluminescence induced by external electric fields parallel to the layers of GaAs/Al0.35Ga0.65As quantum wells are reviewed. The photoluminescence was detected by time-correlated single-photon counting technique at liquid nitrogen and liquid helium temperatures applying electric fields of nanosecond duration to the wells of different width. It is shown how experimentally one can resolve between excitonic and donor impact ionization processes in combining spectral and time domains. From the study of the spectral-temporal dynamics at initial moments we have determined the coefficient of exciton impact ionization as a function of electric field for various widths of the quantum wells.

Paper Details

Date Published: 8 August 2003
PDF: 9 pages
Proc. SPIE 5122, Advanced Organic and Inorganic Optical Materials, (8 August 2003); doi: 10.1117/12.515799
Show Author Affiliations
Jurgis Kundrotas, Semiconductor Physics Institute (Lithuania)
Adolfas Dargys, Semiconductor Physics Institute (Lithuania)
Steponas Asmontas, Semiconductor Physics Institute (Lithuania)
Gintaras Valusis, Semiconductor Physics Institute (Lithuania)
Klaus Koehler, Fraunhofer-Institut fur Angewandte Festkorperphysi (Germany)

Published in SPIE Proceedings Vol. 5122:
Advanced Organic and Inorganic Optical Materials
Andris Krumins; Donats Millers; Inta Muzikante; Andris Sternbergs; Vismants Zauls, Editor(s)

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