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Proceedings Paper

Annealing of radiation defects in x-irradiated LiBaF3
Author(s): Peteris Kulis; Uldis Rogulis; Maris Springis; Ivars Tale; Aris Veispals; Valters Ziraps
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Paper Abstract

Results of the glow rate technique application for analysis of the activation energy of thermostimulated annealing of X-ray created F-type color centers in pure and containing oxygen centers LiBaF3 crystals are presented. It is shown that depending on the impurity composition two alternative mechanisms could be involved in the annealing of color centers. It is proposed that either the anion vacancy governed migration of F-centers resulting in recombination with complementary defects, or the thermal delocalization of radiation created fluorine (Fi) interstitials captured by anti-structure defects followed by recombination with all kinds of complementary F-type centers are responsible for the recombination of radiation defects above RT.

Paper Details

Date Published: 8 August 2003
PDF: 6 pages
Proc. SPIE 5122, Advanced Organic and Inorganic Optical Materials, (8 August 2003); doi: 10.1117/12.515699
Show Author Affiliations
Peteris Kulis, Univ. of Latvia (Latvia)
Uldis Rogulis, Univ. of Latvia (Latvia)
Maris Springis, Univ. of Latvia (Latvia)
Ivars Tale, Univ. of Latvia (Latvia)
Aris Veispals, Univ. of Latvia (Latvia)
Valters Ziraps, Univ. of Latvia (Latvia)


Published in SPIE Proceedings Vol. 5122:
Advanced Organic and Inorganic Optical Materials
Andris Krumins; Donats Millers; Inta Muzikante; Andris Sternbergs; Vismants Zauls, Editor(s)

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