Share Email Print
cover

Proceedings Paper

Temperature dependence of light-output performance of InGaN/GaN multiple-quantum-well light-emitting diodes with various In compositions
Author(s): Chul Huh; William J. Schaff; Lester Fuess Eastman; Seong-Ju Park
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We have investigated the temperature dependence of electrical and output performance of InGaN/GaN multiple-quantum well (MQW) light-emitting diodes (LEDs) with different indium compositions in the InGaN/GaN MQWs. With increasing In composition in the MQWs, the output performance of the LEDs at room temperature was increased due to a deeper potential barrier for the carriers to escape from the MQWs and the localized energy states caused by a In composition fluctuation in MQWs. However, it was found that the output performance depends on the In composition in InGaN/GaN MQWs with increasing temperature from room temperature. With increasing temperature, the output power for LED with a relatively higher In composition in the MQWs was decreased more rapidly compared to that of LED with a lower In composition in the MQWs due to the increased nonradiation recombination through the high defect densities in the MQWs resulted from the increased accumulation of strain between InGaN well and GaN barrier.

Paper Details

Date Published: 26 January 2004
PDF: 6 pages
Proc. SPIE 5187, Third International Conference on Solid State Lighting, (26 January 2004); doi: 10.1117/12.515648
Show Author Affiliations
Chul Huh, Cornell Univ. (United States)
William J. Schaff, Cornell Univ. (United States)
Lester Fuess Eastman, Cornell Univ. (United States)
Seong-Ju Park, Kwangju Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 5187:
Third International Conference on Solid State Lighting
Ian T. Ferguson; Nadarajah Narendran; Steven P. DenBaars; John C. Carrano, Editor(s)

© SPIE. Terms of Use
Back to Top