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Proceedings Paper

Selete activity of 157-nm lithography and masks
Author(s): Nobuyuki Yoshioka; Toshiro Itani; Wataru Wakamiya
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Paper Abstract

Selete takes charge of the development of device and process technologies in 'Asuka" project which object is the technology development for 65nm node SoC devices. In the field of lithography, Selete has two major programs. One is 157nm lithography and related mask development, the other is EPL. In this paper, development activities of 157nm lithography program and the mask program in Selete are described. In the 157nm lithography program, exposure tool technology, resist, processing and resolution enhancement technique are developed collaborating with tool and material suppliers. In the mask program, mask key tools are developed by joint work with mask suppliers and tool suppliers.

Paper Details

Date Published: 28 May 2003
PDF: 5 pages
Proc. SPIE 5148, 19th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (28 May 2003); doi: 10.1117/12.515146
Show Author Affiliations
Nobuyuki Yoshioka, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)
Wataru Wakamiya, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 5148:
19th European Conference on Mask Technology for Integrated Circuits and Microcomponents
Uwe F. W. Behringer, Editor(s)

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