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Proceedings Paper

Compensation of long-range process effects on photomasks by design data correction
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Paper Abstract

CD requirements for advanced photomasks are getting very demanding for the 100 nm-node and below; the ITRS roadmap requires CD uniformities below 10 nm for the most critical layers. To reach this goal, statistical as well as systematic CD contributions must be minimized. Here, we focus on the reduction of systematic CD variations across the masks that may be caused by process effects, e.g. dry etch loading.

Paper Details

Date Published: 28 May 2003
PDF: 10 pages
Proc. SPIE 5148, 19th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (28 May 2003); doi: 10.1117/12.515122
Show Author Affiliations
Martin Bloecker, Infineon Technologies AG (Germany)
Gerd Ballhorn, Infineon Technologies AG (Germany)
Jens Schneider, Infineon Technologies AG (Germany)
Nikola Belic, PDF Solutions GmbH (Germany)
Hans Eisenmann, PDF Solutions GmbH (Germany)
Danny Keogan, Numerical Technologies Inc. (United States)


Published in SPIE Proceedings Vol. 5148:
19th European Conference on Mask Technology for Integrated Circuits and Microcomponents
Uwe F. W. Behringer, Editor(s)

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