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Proceedings Paper

Enhancement of diffusion barrier properties of Ta by plasma immersion ion implantation
Author(s): Mukesh Kumar; Raj Kumar; Dinesh Kumar; P. M. Raole; P. J. George; Suryakant B. Gupta; D. K. Paul
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Paper Abstract

Ta(N) film was synthesized by implanting the nitrogen ions in Ta films employing Plasma Immersion Ion implantation (PIII) technique. Silicon wafers coated with Ta were implanted with nitrogen at two different doses. Nitrogen ions implanted in the film render it to become Ta(N), which in effect hinders the grain boundary diffusion. The ion implantation was carried out for two doses 1015ions/cm2 and 1017ions/cm2 corresponding to low and high dose regime. Thereafter a copper layer was deposited on the samples to produce Cu/Ta(N)/Si structure. To evaluate the barrier properties of Ta(N) these samples were annealed up to 700°C for 30 minutes. Sheet resistance, X-Ray Diffraction (XRD) and Scanning Electron Microscope (SEM) measurements were carried out to investigate the effect of annealing.

Paper Details

Date Published: 14 October 2003
PDF: 6 pages
Proc. SPIE 5062, Smart Materials, Structures, and Systems, (14 October 2003); doi: 10.1117/12.514859
Show Author Affiliations
Mukesh Kumar, Kurukshetra Univ. (India)
Raj Kumar, Semiconductor Complex Ltd. (India)
Dinesh Kumar, Kurukshetra Univ. (India)
P. M. Raole, Institute for Plasma Research (India)
P. J. George, Kurukshetra Univ. (India)
Suryakant B. Gupta, Institute for Plasma Research (India)
D. K. Paul, Central Scientific Instruments Organisation (India)


Published in SPIE Proceedings Vol. 5062:
Smart Materials, Structures, and Systems
S. Mohan; B. Dattaguru; S. Gopalakrishnan, Editor(s)

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