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Proceedings Paper

Study on hot-wall-epitaxy-grown 9,10-anthraquinone films
Author(s): Aman Mahajan; R. K. Bedi
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Paper Abstract

9,10-Anthraquinone films have been prepared by hot wall epitaxy technique onto the glass substrate kept at different temperatures in a vacuum of 10-5 Torr. The experimental conditions are optimized to obtain better crystallinity of the films. The films so prepared have been studied for their structural, optical and electrical properties. The IR and NMR studies confirmed the formation of 9,10-anthraquinone films. Crystallites as large as 0.61 μm are observed in the case of films deposited at 348 K. Observations reveal that the crystallinity of the films increases with increase in substrate temperature. The conduction in these films is found to be ohmic in nature and appears to take place by thermally activated hopping above intermolecular barriers. The electrical conductivity, carrier concentration and drift mobility of the films increase with increases in substrate temperature, whereas activation energy decreases. Analysis of optical absorption measurements on the films indicates that the interband transition energies lie in the range 3.16 - 3.44 eV.

Paper Details

Date Published: 14 October 2003
PDF: 8 pages
Proc. SPIE 5062, Smart Materials, Structures, and Systems, (14 October 2003); doi: 10.1117/12.514848
Show Author Affiliations
Aman Mahajan, Guru Nanak Dev Univ. (India)
R. K. Bedi, Guru Nanak Dev Univ. (India)


Published in SPIE Proceedings Vol. 5062:
Smart Materials, Structures, and Systems
S. Mohan; B. Dattaguru; S. Gopalakrishnan, Editor(s)

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