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Proceedings Paper

Light emission from rare-earth-implanted GaN expected for full-color display
Author(s): Akira Yoshida; Y. Nakanishi; Akihiro Wakahara
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Paper Abstract

Rare-Earth (RE) was implanted to GaN epitaxial layer. Eu-implanted GaN films were annealed at the temperature range of 950 - 1100°C to reduce the implantation damages. Photoluminescence (PL) properties were measured, and strong emission at 621 nm corresponding to the transition from 5D0 to 7F2 states of Eu3+ was observed. The thermal quenching of PL intensity was very small and the peak position was not shifted. Large hardness for high energy electron-induced damages was observed.

Paper Details

Date Published: 14 October 2003
PDF: 2 pages
Proc. SPIE 5062, Smart Materials, Structures, and Systems, (14 October 2003); doi: 10.1117/12.514829
Show Author Affiliations
Akira Yoshida, Toyohashi Univ. of Technology (Japan)
Y. Nakanishi, Toyohashi Univ. of Technology (Japan)
Akihiro Wakahara, Toyohashi Univ. of Technology (Japan)


Published in SPIE Proceedings Vol. 5062:
Smart Materials, Structures, and Systems
S. Mohan; B. Dattaguru; S. Gopalakrishnan, Editor(s)

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