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Proceedings Paper

Polysilicon piezoresistive pressure sensor using silicon-on-insulator (SOI) approach
Author(s): Kunchinadka Narayana Hari Bhat; Enakshi Bhattacharya; Amitava DasGupta; Nandita DasGupta; Bhimanadhuni R. KotiReddy; Parimi Ramaseshagiri Rao; Krishnan Balasubramaniam
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Paper Abstract

In this paper, the design and fabrication of polysilicon piezoresistive pressure sensor are presented. The design considerations such as the membrane thickness and the arrangement pattern of polysilicon piezo-resistors on the membrane are discussed with emphasis on the use of SOI approach. The results obtained on the pressure sensors and the temperature coefficient of resistivity of polysilicon resistors are presented. The results presented include the electrical trimming of polysilicon resistors for compensating zero offset voltage in the pressure sensors.

Paper Details

Date Published: 14 October 2003
PDF: 10 pages
Proc. SPIE 5062, Smart Materials, Structures, and Systems, (14 October 2003); doi: 10.1117/12.514725
Show Author Affiliations
Kunchinadka Narayana Hari Bhat, Indian Institute of Technology, Madras (India)
Enakshi Bhattacharya, Indian Institute of Technology, Madras (India)
Amitava DasGupta, Indian Institute of Technology, Madras (India)
Nandita DasGupta, Indian Institute of Technology, Madras (India)
Bhimanadhuni R. KotiReddy, Indian Institute of Technology, Madras (India)
Parimi Ramaseshagiri Rao, Indian Institute of Technology, Madras (India)
Krishnan Balasubramaniam, Indian Institute of Technology, Madras (India)


Published in SPIE Proceedings Vol. 5062:
Smart Materials, Structures, and Systems
S. Mohan; B. Dattaguru; S. Gopalakrishnan, Editor(s)

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