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Proceedings Paper

GaAs-based tunnel junctions
Author(s): C. Moeller; J. Boettcher; Harald Kuenzel
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Paper Abstract

The development of high quality GaAs-based tunnel junctions grown by molecular beam epitaxy was systematically studied. Fabricated Si/Be-doped GaAs tunnel junctions show record low junction resistance of less than 7 x 10-5 Ω/cm2 and a peak current density of > 1900 A/cm2. The enhancement of lateral current spreading is demonstrated by large-area vertical-emitting LEDs.

Paper Details

Date Published: 11 June 2003
PDF: 3 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514616
Show Author Affiliations
C. Moeller, H-H Institut fuer Nachrichtentechnik Berlin GmbH (Germany)
J. Boettcher, H-H Institut fuer Nachrichtentechnik Berlin GmbH (Germany)
Harald Kuenzel, H-H Institut fuer Nachrichtentechnik Berlin GmbH (Germany)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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