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Proceedings Paper

Resonant broadening of two-dimentional state in semiconductors with inverted band structure
Author(s): Alexander V. Germanenko; Grigori M. Minkov; V. A. Larionova; O. E. Rut
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Paper Abstract

Results of tunneling studies of MOS-structures based on Hg1-xCdxTe with an inverted band structure are reported. It has been found that the 2D states have revealed themselves at negative energies, when they are in resonance with the heavy hole valence band of bulk material. To interpret the experimental data the energy spectrum and broadening of the 2D states in a surface quantum well has been theoretically investigated in the framework of the Kane model, the finite value of the heavy hole effective mass has been taken into account.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514613
Show Author Affiliations
Alexander V. Germanenko, Ural State Univ. (Russia)
Grigori M. Minkov, Ural State Univ. (Russia)
V. A. Larionova, Ural State Univ. (Russia)
O. E. Rut, Ural State Univ. (Russia)

Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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