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Proceedings Paper

Magnetotransport of 2D-electrons and holes at a type II broken-gap single heterojunction doped with acceptor impurity
Author(s): Konstantin D. Moiseev; V. A. Berezovets; Maya P. Mikhailova; V. I. Nizhankovskii; R. V. Parfeniev; Yury P. Yakovlev
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Paper Abstract

The observation of the Quantum Hall effect (QHE) in a semimetal channel with coexisting electrons and holes, simultaneously, at the type II broken-gap p-GaIn0.16As0.22Sb/p-InAs single heterointerface based on unintentionally doped quaternary solid solution obtained by liquid phase epitaxy (LPE) was reported for the first time elsewhere. In this report the quantum magnetotransport in the p-Ga0.84In0.16As0.22Sb0.78/p-InAs single heterostructure has been studied for a set of the samples with the both undoped and doped with Zn impurity quaternary layer at low temperatures in high magnetic fields up to 14 T.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514547
Show Author Affiliations
Konstantin D. Moiseev, A.F. Ioffe Physico-Technical Institute (Russia)
V. A. Berezovets, A.F. Ioffe Physico-Technical Institute (United States)
Maya P. Mikhailova, A.F. Ioffe Physico-Technical Institute (Russia)
V. I. Nizhankovskii, International High Magnetic Fields and Low-Temperature Lab. (United States)
R. V. Parfeniev, A.F. Ioffe Physico-Technical Institute (United States)
Yury P. Yakovlev, A.F. Ioffe Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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