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Proceedings Paper

Hopping conductivity and magnetic-field-induced quantum hall-insulator transition in InAs/GaAs quantum dot layers
Author(s): Vladimir A. Kulbachinskii; R. A. Lunin; V. A. Rogozin; A. V. Golikov; V. G. Kytin; B. N. Zvonkov; S. M. Nekorkin; D. O. Filatov; A. de Visser
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Paper Abstract

We have investigated the temperature dependence of resistance in the temperature range T = 0.07 - 300 K, the quantum Hall effect (qHe) and the Shubnikov-de Haas (SdH) effect in InAs/GaAs quantum dot structures in magnetic field up to 35 T. Two-dimensional Mott variable range hopping conductivity (VRHC) has been observed at low temperatures in samples with low carrier concentration. The length of localization correlates very well with the quantum dot cluster size obtained by Atomic Force Microscope (AFM). In samples with relatively high carrier concentration the transition qHe-insulator was observed.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514523
Show Author Affiliations
Vladimir A. Kulbachinskii, Moscow State Univ. (Russia)
R. A. Lunin, Moscow State Univ. (United States)
V. A. Rogozin, Moscow State Univ. (United States)
A. V. Golikov, Moscow State Univ. (United States)
V. G. Kytin, Moscow State Univ. (United States)
B. N. Zvonkov, Univ. of Nizhny Novgorod (Russia)
S. M. Nekorkin, Univ. of Nizhny Novgorod (United States)
D. O. Filatov, Univ. of Nizhny Novgorod (Russia)
A. de Visser, Univ. of Amsterdam (United States)

Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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