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Proceedings Paper

Magnetoresistance in long InSb nanowires
Author(s): Sergei V. Zaitsev-Zotov; Yu. A. Kumzerov; Yu. A. Firsov; P. Monceau
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Paper Abstract

Magnetoresistance of long correlated nanowires of degenerate semiconductor InSb in asbestos matrix (wire diameter is around 50 Å, length 0.1 - 1 mm) is studied over temperature range 2.3 - 300 K. At zero magnetic field the electric conduction G and current-voltage characteristics of such wires obeys the power laws G varies direct as Tα, I varies direct as Vβ, expected for one-dimensional electron systems. The effect of magnetic field corresponds to 20% growth of the exponents α, β at H = 10 T that may result from breaking of the spin-charge separation in the one-dimensional electron system.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514512
Show Author Affiliations
Sergei V. Zaitsev-Zotov, Institute of Radioengineering and Electronics (Russia)
Yu. A. Kumzerov, A.F. Ioffe Physico-Technical Institute (United States)
Yu. A. Firsov, A.F. Ioffe Physico-Technical Institute (United States)
P. Monceau, Ctr. de Recherches sur les Tres Basses Temperatures (France)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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