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Proceedings Paper

Spin memory in the n-doped GaAs/AlGaAs quantum wells
Author(s): S. Yu. Verbin; Yu. P. Efimov; V. M. Petrov; I. V. Ignatiev; Yu. K. Dolgikh; S. A. Eliseev; I. Ya Gerlovin; V. V. Ovsyankin; Yasuaki Masumoto
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Paper Abstract

The polarized luminescence spectra and kinetics of the GaAs quantum wells with excess free electrons are studied experimentally. Quantum beats between the exciton and electron spin sublevels, split by a magnetic field, are detected. The dynamics of the degree of polarization is found to contain a long component associated with slow relaxation of electron spins.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514466
Show Author Affiliations
S. Yu. Verbin, St. Petersburg State Univ. and Univ. of Tsukuba (Russia)
Yu. P. Efimov, St. Petersburg State Univ. (Russia)
V. M. Petrov, A.F. Ioffe Physico-Technical Institute (Russia)
I. V. Ignatiev, St. Petersburg State Univ. and Univ. of Tsukuba (Russia)
Yu. K. Dolgikh, St. Petersburg State Univ. (Russia)
S. A. Eliseev, S.I. Vavilov State Optical Institute (Russia)
I. Ya Gerlovin, S.I. Vavilov State Optical Institute (Russia)
V. V. Ovsyankin, S.I. Vavilov State Optical Institute (Russia)
Yasuaki Masumoto, Univ. of Tsukuba (Japan)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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