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Proceedings Paper

Resonant acceptor states in delta-doped SiGe nanostructures
Author(s): A. A. Prokofiev; M. A. Odnoblyudov; Irina N. Yassievich; K. A. Chao
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Paper Abstract

Resonant acceptor states induced by internal strain in Si/SiGe/Si quantum wells delta-doped with boron have been investigated theoretically. Sample design of Si/SiGe/Si MQW structures for resonant state THz laser is suggested.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514450
Show Author Affiliations
A. A. Prokofiev, A.F. Ioffe Physico-Technical Institute (Russia)
M. A. Odnoblyudov, A.F. Ioffe Physico-Technical Institute and Lunds Univ. (Russia)
Irina N. Yassievich, A.F. Ioffe Physico-Technical Institute (Russia)
K. A. Chao, Lunds Univ. (Sweden)

Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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