Share Email Print
cover

Proceedings Paper

Stimulated THz emission of acceptor-doped SiGe/Si
Author(s): Miron S. Kagan; Igor V. Altukhov; Elena G. Chirkova; Konstantin A. Korolev; Valery P. Sinis; R. T. Troeger; S. K. Ray; James Kolodzey
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

An intense THz emission was observed from strained SiGe/Si quantum-well structures under strong pulsed electric field. The p-type structures were MBE-grown on n-type Si substrate and δ-doped with boron. Lines with wavelengths near 100 microns were observed in the emission spectrum. The modal structure in the spectrum gave evidence for the stimulated nature of the emission. The origin of the THz emission was attributed to intracenter optical transitions between resonant and localized boron levels.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514394
Show Author Affiliations
Miron S. Kagan, Institute of Radio Engineering and Electronics (Russia)
Igor V. Altukhov, Institute of Radio Engineering and Electronics (Russia)
Elena G. Chirkova, Institute of Radio Engineering and Electronics (Russia)
Konstantin A. Korolev, Institute of Radio Engineering and Electronics (Russia)
Valery P. Sinis, Institute of Radio Engineering and Electronics (Russia)
R. T. Troeger, Univ. of Delaware (United States)
S. K. Ray, Univ. of Delaware (United States)
James Kolodzey, Univ. of Delaware (United States)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

© SPIE. Terms of Use
Back to Top