Share Email Print
cover

Proceedings Paper

Influence of intraband relaxation processes on threshold and power-current characteristics of quantum well lasers
Author(s): Georgy G. Zegrya; Irina A. Kostko; Natalya A. Gunko; Eugen B. Dogonkin
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The effect of carrier-carrier relaxation on threshold and power-current characteristics of InAs and GaAs quantum well (QW) lasers is studied. Dependence of carrier relaxation time on temperature and carrier density is considered. It is shown that in this case the gain coefficient becomes a more pronounced function of temperature and carrier density, and threshold current density increases drastically.

Paper Details

Date Published: 11 June 2003
PDF: 3 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514389
Show Author Affiliations
Georgy G. Zegrya, A.F. Ioffe Physico-Technical Institute (Russia)
Irina A. Kostko, A.F. Ioffe Physico-Technical Institute (Russia)
Natalya A. Gunko, A.F. Ioffe Physico-Technical Institute (Russia)
Eugen B. Dogonkin, A.F. Ioffe Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology

© SPIE. Terms of Use
Back to Top