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Proceedings Paper

Er-doped SiO2 with silicon nanocrystals as a new active optical medium
Author(s): Irina N. Yassievich; Mikhail S. Bresler; Oleg B. Gusev; A. S. Moskalenko
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Paper Abstract

Properties of a new active optical medium, Er-doped SiO2 with silicon nanocrystals, are discussed. We have considered in detail the mechanism of excitation of erbium ions by quantum confined electron-hole pairs in silicon nanocrystals, the diffusion of excitation over the erbium ions inserted into the silicon dioxide matrix and the lifetime of erbium in the excited state limited by de-excitation cneters (traps, "black holes") in SiO2.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514386
Show Author Affiliations
Irina N. Yassievich, A.F. Ioffe Physico-Technical Institute (Russia)
Mikhail S. Bresler, A.F. Ioffe Physico-Technical Institute (Russia)
Oleg B. Gusev, A.F. Ioffe Physico-Technical Institute (Russia)
A. S. Moskalenko, A.F. Ioffe Physico-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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