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Proceedings Paper

Use of nanostructure-cluster-based ion-implantation-induced saturable absorbers in multisection high-power 1.5-μm picosecond laser diodes
Author(s): G. B. Venus; A. Gubenko; Efim L. Portnoi; Eugene A. Avrutin; Jan-Michael Frahm; J. Kubler; S. Schelhase
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Paper Abstract

We report short (30 - 35 ps), high energy (more than 100 pJ) optical pulses at 1.5 μm from Q-swithced laser diodes with multisection implantation-induced saturable absorbers. Dramatic improvement in pulse parameters over tandem lasers is due to suppression of spatial hole-burning and amplified spontaneous emission.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514375
Show Author Affiliations
G. B. Venus, A.F. Ioffe Physico-Technical Institute (Russia)
A. Gubenko, A.F. Ioffe Physico-Technical Institute (Russia)
Efim L. Portnoi, A.F. Ioffe Physico-Technical Institute (Russia)
Eugene A. Avrutin, Univ. of York (United Kingdom)
Jan-Michael Frahm, Advanced Photonic Systems GmbH (Germany)
J. Kubler, Advanced Photonic Systems GmbH (Germany)
S. Schelhase, Advanced Photonic Systems GmbH (Germany)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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