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Proceedings Paper

SC DHS InGaAsP/InP lasers( =1.5-1.6 um) with above-threshold internal quantum efficiency nsti about 100%
Author(s): Ilya S. Tarasov; Georgy G. Zegrya; G. V. Skrynnikov; Nikita A. Pikhtin; S. O. Slipchenko
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Paper Abstract

InGaAsP/InP SC DHS lasers with different waveguide design were fabricated and studied. Extremely high values of internal quantum efficiency of stimulated emission ηist about 97% was demonstrated experimentally in structures with step-like waveguide design which is related to lowest leakage currents above threshold and reduced threshold carriers concentration. Theoretically was shown, that it is possible to create lasers emitting at λ = 1.5 μm, with an internal quantum efficiency of stimulated emission close to 100%. ηist for structure with different waveguide design was calculated and prove to be in good agreement with experimental data.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514371
Show Author Affiliations
Ilya S. Tarasov, A.F. Ioffe Physico-Technical Institute (Russia)
Georgy G. Zegrya, A.F. Ioffe Physico-Technical Institute (Russia)
G. V. Skrynnikov, A.F. Ioffe Physico-Technical Institute (Russia)
Nikita A. Pikhtin, A.F. Ioffe Physico-Technical Institute (Russia)
S. O. Slipchenko, A.F. Ioffe Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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