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Proceedings Paper

Metal nanoelectrodes for molecular transistor and investigation of electron transport in molecular systems
Author(s): D. B. Suyatin; E. S. Soldatov; Ivan Maximov; Lars Montelius; Lars Samuelson; G. B. Khomutov; S. P. Gubin; A. N. Sergeev-Cherenkov
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Paper Abstract

Gold nanoelectrodes with gaps of less than 10 nm were formed by conventional E-beam lithography on silicon substrates covered by Al2O3. Molecular films were deposited on the electrodes by Langmuir-Shaefer technique. The I-V curves of such systems show a suppressed conductance indicating a correlated electron tunnelling through the system. All measurements were made at room temperature.

Paper Details

Date Published: 11 June 2003
PDF: 3 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514284
Show Author Affiliations
D. B. Suyatin, Moscow State Univ. (Russia)
E. S. Soldatov, Moscow State Univ. (Russia)
Ivan Maximov, Lunds Univ. (Sweden)
Lars Montelius, Lunds Univ. (Sweden)
Lars Samuelson, Lunds Univ. (Sweden)
G. B. Khomutov, Moscow State Univ. (Russia)
S. P. Gubin, Institute of General Inorganic Chemistry (Russia)
A. N. Sergeev-Cherenkov, Moscow State Univ. (Russia)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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