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Proceedings Paper

Optimization of InGaAs/InAlAs strained multiple quantum wells for amplitude modulators
Author(s): Maurico Pamplona Pires; Christiana V.-B. Tribuzy; Boris Yavich; P. L. Souza
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Paper Abstract

InGaAs/InAlAs strained multiple quantum well structures for amplitude modulators based on the quantum confined Stark effect were studied in order to find the most efficient one for optical communication at 1.55 μm. Parameters such as contrast ratio, polarization sensitivity, operation voltage and chirp are determined for structures with different InGaAs composition and thickness. Simulations of the devices' performance are carried out and are in good agreement with experiment.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514281
Show Author Affiliations
Maurico Pamplona Pires, Pontificia Univ. Catolica do Rio de Janeiro (Brazil)
Christiana V.-B. Tribuzy, Pontificia Univ. Catolica do Rio de Janeiro (Brazil)
Boris Yavich, A.F. Ioffe Physico-Technical Institute (Russia)
P. L. Souza, Pontificia Univ. Catolica do Rio de Janeiro (Brazil)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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