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Proceedings Paper

Origin of the 1/f noise in GaN-based HFETs: Is it tunneling?
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Paper Abstract

The nature of the 1/f noise in GaN/GaAlN Heterostructure Field Effect Transistors (HFETs) has been discussed. New experimental results on the 1/f noise in GaN/GaAlN HFETs and different models on the flicker noise have been also described. It has been demonstrated that the 1/f noise in GaN/GaAlN HFETs might be linked to the electron tunneling from the 2D gas into the tail states in GaN or AlGaN layers.

Paper Details

Date Published: 11 June 2003
PDF: 3 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514280
Show Author Affiliations
Michael E. Levinshtein, A.F. Ioffe Physico-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology

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