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Proceedings Paper

High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells
Author(s): Alexey R. Kovsh; Alexey E. Zhukov; Nikolay A. Maleev; Sergei S. Mikhrin; A. V. Vasil'ev; Yuri M. Shernyakov; Daniil A. Livshits; Mikhail V. Maximov; D. S. Sizov; N. V. Kryzhanovskaya; Nikita A. Pikhtin; V. A. Kapitonov; Ilya S. Tarasov; N. N. Ledentsov; Victor M. Ustinov; Jyh-Shyang Wang; Li-Chung Wei; Gray Lin; Jim Y. Chi
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Paper Abstract

Development of submonolayer deposition technique can offer significant flexibility in creation of strained heterostructures of different types and material systems. It was found that under certain growth conditions the deposition of InAs insertions of less than 1 monolayer (ML) thickness in GaAs matrix forms so-called sub-monolayer quantum dots (SML QDs). The energy spectrum of these QDs can be varied over a wide range by tuning the InAs coverage and the thickness of GaAs spacers. Stranski-Krastanow (In,Ga)As QDs (SK QDs), which have been investigated in more details, have proved theoretically predicted lower threshold current density of 26 A/cm2 in compare with QW lasers. However, strong size variation of SK QDs in combination with the relatively low sheet density leads to low peak gain achievable in the ground state. This problem is the reason of typically low efficiency of SK QD-based lasers. Due to higher gain, SML QDs have proved their potential for high power laser application. In this presentation we report on further progress in the technology of SML QD lasers demonstrating high output power (6W) from 100-μm-wide laser diode emitting at 0.94 μm. High power QW-based lasers of the state-of-the-art performance are also presented for comparison.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514262
Show Author Affiliations
Alexey R. Kovsh, A.F. Ioffe Physico-Technical Institute (Russia)
Alexey E. Zhukov, A.F. Ioffe Physico-Technical Institute (Russia)
Nikolay A. Maleev, A.F. Ioffe Physico-Technical Institute (Russia)
Sergei S. Mikhrin, A.F. Ioffe Physico-Technical Institute (Russia)
A. V. Vasil'ev, A.F. Ioffe Physico-Technical Institute (Russia)
Yuri M. Shernyakov, A.F. Ioffe Physico-Technical Institute (Russia)
Daniil A. Livshits, A.F. Ioffe Physico-Technical Institute (Russia)
Mikhail V. Maximov, A.F. Ioffe Physico-Technical Institute (Russia)
D. S. Sizov, A.F. Ioffe Physico-Technical Institute (Russia)
N. V. Kryzhanovskaya, A.F. Ioffe Physico-Technical Institute (Russia)
Nikita A. Pikhtin, A.F. Ioffe Physico-Technical Institute (Russia)
V. A. Kapitonov, A.F. Ioffe Physico-Technical Institute (Russia)
Ilya S. Tarasov, A.F. Ioffe Physico-Technical Institute (Russia)
N. N. Ledentsov, A.F. Ioffe Physico-Technical Institute (Russia)
Victor M. Ustinov, A.F. Ioffe Physico-Technical Institute (Russia)
Jyh-Shyang Wang, Industrial Technology Research Institute (Taiwan)
Li-Chung Wei, Industrial Technology Research Institute (Taiwan)
Gray Lin, Industrial Technology Research Institute (Taiwan)
Jim Y. Chi, Industrial Technology Research Institute (Taiwan)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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