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Proceedings Paper

Operating modes of the Auger-transistor and the photo-field detectors under strong electric field
Author(s): V. D. Kalganov; N. V. Mileshkina; E. V. Ostroumova
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Paper Abstract

Conditions for appearance of a self-consistent quantum well in both the near-surface region of a vacuum semi-conductor field-emitter and a case of metal-insulator-semiconductor heterostructures (Auger-transistor) under strong electric field have been studied.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514261
Show Author Affiliations
V. D. Kalganov, A.F. Ioffe Physico-Technical Institute (Russia)
N. V. Mileshkina, A.F. Ioffe Physico-Technical Institute (Russia)
E. V. Ostroumova, St. Petersburg State Technical Univ. (Russia)

Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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