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Proceedings Paper

Strongly modulated conduction in Ag/PLZT/LSCO ferroelectronic field-effect transistor
Author(s): I. Grekhov; L. Delimova; I. Liniichuk; D. Mashovets; I. Veselovsky
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Paper Abstract

A possibility of fabricating all-perovskite field effect transistor is shown, which can provide the development of a nonvolatile memory cell with a nondestructive readout of information. A thin (approximately 5 - 10 nm) Sr-doped lantanate cuprate (LSCO) film was used as a transistor channel while a ferroelectric gate insulator was a lead zirconate titanate (PLZT) film of about 100 nm thickness. The modulation of a channel conduction was found in the studied transistors to be approximately 70%, which is an order of magnitude larger than that reported in the world literature.

Paper Details

Date Published: 11 June 2003
PDF: 3 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514253
Show Author Affiliations
I. Grekhov, A.F. Ioffe Physico-Technical Institute (Russia)
L. Delimova, A.F. Ioffe Physico-Technical Institute (Russia)
I. Liniichuk, A.F. Ioffe Physico-Technical Institute (Russia)
D. Mashovets, A.F. Ioffe Physico-Technical Institute (Russia)
I. Veselovsky, A.F. Ioffe Physico-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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