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Proceedings Paper

Fabrication of high-lumen InGaN flip chip LEDs
Author(s): Hari S. Venugopalan; Xiang Gao; Tingting Zhang; Bryan S. Shelton; Anthony DiCarlo; Ivan Eliashevich; Michael Hsing
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Paper Abstract

The factors critical to the fabrication of high-lumen InGaN flip chip LEDs are discussed. It is shown that as the die size and the current density increase, the n-GaN sheet conductivity becomes extremely critical to uniform current spreading and the corresponding uniformity of light emission. It is observed that a thick p-metal is important in reducing hot spot formation. The p-contact is also critical to increasing light extraction efficiency and wall-plug efficiency. The merits and reliability of Al- and Ag-based p-contacts are compared. Reliability issues related to the n-contact are also discussed. Finally, performance data for InGaN blue lamps, for drive currents up to 900 mA is shown.

Paper Details

Date Published: 26 January 2004
PDF: 7 pages
Proc. SPIE 5187, Third International Conference on Solid State Lighting, (26 January 2004); doi: 10.1117/12.514073
Show Author Affiliations
Hari S. Venugopalan, GELcore LLC (United States)
Xiang Gao, GELcore LLC (United States)
Tingting Zhang, GELcore LLC (United States)
Bryan S. Shelton, GELcore LLC (United States)
Anthony DiCarlo, GELcore LLC (United States)
Ivan Eliashevich, GELcore LLC (United States)
Michael Hsing, GELcore LLC (United States)


Published in SPIE Proceedings Vol. 5187:
Third International Conference on Solid State Lighting
Ian T. Ferguson; Nadarajah Narendran; Steven P. DenBaars; John C. Carrano, Editor(s)

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