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Proceedings Paper

Improvement in light-output power of InGaN/GaN light-emitting diodes by p-GaN surface modification using self-assembled metal clusters
Author(s): Eun-Jeong Kang; Chul Huh; S.-H. Lee; J.-J. Jung; Song-Jae Lee; Seong-Ju Park
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Paper Abstract

To improve the escape of photons from an LED structure, we fabricated nano-sized cavities on a p-GaN surface utilizing Pt self-assembled metal clusters for an etch mask. Wet and dry etching processes were employed to produce nano-sized cavities on the p-GaN surface. The dry etching process produced cavities with diameters ranging from 200 nm to 450 nm and from 30 to 80 nm in depth, respectively. The wet etching process, however, produced small size cavities with a size of 5 ~ 6 nm. Electroluminescence measurement showed that the relative optical output powers are increased by 88% as evidenced by frontside measurement compared to those of LEDs with no nano-sized cavities. In addition, the electrical performance was also improved as evidenced by the I-V characteristic curves. This enhanced performance can be attributed to an enhancement in light escaping due to the increased light emitting area as the result of the surface cavities and also to the reduced contact resistance due to the increased contact area.

Paper Details

Date Published: 26 January 2004
PDF: 13 pages
Proc. SPIE 5187, Third International Conference on Solid State Lighting, (26 January 2004); doi: 10.1117/12.514072
Show Author Affiliations
Eun-Jeong Kang, Kwangju Institute of Science and Technology (South Korea)
Chul Huh, Cornell Univ. (United States)
S.-H. Lee, LG Innotek Co., Ltd. (South Korea)
J.-J. Jung, LG Innotek Co., Ltd. (South Korea)
Song-Jae Lee, Chugnam National Univ. (South Korea)
Seong-Ju Park, Kwangju Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 5187:
Third International Conference on Solid State Lighting
Ian T. Ferguson; Nadarajah Narendran; Steven P. DenBaars; John C. Carrano, Editor(s)

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